منابع مشابه
Low resistance ohmic contacts on wide band-gap GaN
We report a new metallization process for achieving low resistance ohmic contacts to molecular beam epitaxy grown n-GaN (--Or7 cme3) using an Ah% bilayer metallization scheme. Four different thin-film contact metallizations were compared during the investigation, including Au, Al, Ti/Au, and Ti/Al layers. The metals were first deposited via conventional electron-beam evaporation onto the GaN su...
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A low-resistance ohmic contact to Mg-doped p-type GaN grown by metal-organic chemical vapor deposition (MOCVD) with a carrier concentration of 2 · 10 cm 3 using Pd/Ni/Au metallization was formed. An anneal at 500 C for 1 min in a flowing N2 ambient produced an excellent ohmic contact with a specific contact resistivity as low as 2.4 · 10 5 X cm. X-ray photoelectron spectroscopy (XPS) and Auger ...
متن کاملZnO–GaN tunnel junction for transparent ohmic contacts to p-GaN
The fabrication procedure of transparent n+-ZnO–p-GaN ohmic junctions has been described. The influence of consecutive technological steps on the electrical, structural and electronic properties of the junction has been studied. The results indicate that the predeposition of Au nucleation film plays a crucial role for the final contact properties. The ohmic behaviour is explained in terms of fo...
متن کاملBreakdown Enhancement Voltage of Algan/Gan Hemts with Schottky and OHMIC Drain Contacts
In present scenario high voltage AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Si substrate with Schottky drain contacts were simulated to increase the breakdown voltage by replacing the conventional Ohmic drain contacts. A significant increase in breakdown voltage values was achieved for nonannealed Schottky contacts by elimination of metal spikes underneath drain electrodes. The bre...
متن کاملThermally stable, oxidation resistant capping technology for TiÕAl ohmic contacts to n-GaN
The intermetallic TiAl3 has been used as a thermally stable cap for Ti/Al ohmic contacts to n-GaN. The electrical performance of the TiAl3-capped contact is nearly the same as that of a standard Ti/Al/Ni/Au contact processed on the same substrate, but the Ti/Al/TiAl3 contact’s performance is optimized at a much lower temperature. The Ti/Al/TiAl3 contact achieved a lowest specific contact resist...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1997
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.119277